CCDs make excellent detectors because they possess high quantum
efficiency, better than CMOS because the fill factor is much
higher. In a CCD, the whole pixel can collect light as opposed to a
CMOS sensor where a minimum of 3 transistors are present at each
pixel and occupy much of the real estate. CCDs are also very low
noise devices compared to CMOS readout as a result of the kTC reset
noise generated each time the sense node is reset. The reset noise
in a CCD can be completely eliminated by correlated double sampling
circuits.
CMOS imagers used in digital cameras are also monolithic devices
fabricated entirely on silicon. The photodetectors are simple p-n
junction diodes. The hybrid devices you referred to are only
necessary for specialized (scientific or military) applications.
Note that in terms of material quality, silicon is vastly superior
to GaAs. Silicon wafers as large as 12" (300 mm) in diameter are
routinely used in production as opposed to compound semiconductors
like GaAs where only 4" wafers are available. I don't know how much
experience you have with GaAs device processing but it is a
nightmare. High temperature processes easily degrade the material
and ruin the devices.
Hey, something I actually know about. I'm an electronics engineer
by the way.
CCD charge coupled device- this is not an optical sensor but a
method of reading out stored charges from semiconductor charge
wells which can be built as part of a semi-conductor photodetector.
The charges stored by the photedetectors are then read out in rows
in an analog fashion. They can then be used in analog recording
systems or converted to digital with A/D converters. This technique
can be built into the same processes used to produce high quality
photo-dectors. The materials are completely different from that
used on silicon computer chips. Typically a Gallium-Arsenide (GaAs)
substrate with Gallium-Indium-Phosphide (GaInP) detectors, or the
like. GaInP and their relatives are incompatible with Silicon
without using some type of buffer material to mate the two together.
In summary: Advanteges of CCD is it's ability to be built on the
same process as high quality photedectors.
Disadvantages: high power consumption, needs external A/D, can't
integrate electronics easily, expensive due to fancy processing and
low volume fabrication.
CMOS is again not a photosensor of any kind but a way of building
logic gates out of complementary silicon transistors. CMOS logic is
built on silicon substrates and is used to make 99.9% of all
computer chips today and as such has great advantages in terms of
volume production and ubiquity. Integrating photodetectors into a
CMOS chip opens up a world of possibilities for on-chip processing
and integration. Because silicon generally can't be used for high
quality photodetectors other types of materials must be integrated.
I'm not sure whether the D30 has some new type of silicon
photodetector or some means of making traditional photodectors
compatible with the CMOS process. My guess is it has some type of
silicon-germanium photodector with on-chip noise reduction.
In summary: Advantages of CMOS is high-volume low cost production,
low power consumption, and ability to integrate electronics with
the sensor package.
Disadvantages: Incompatibility with traditional materials used to
make high-quality photodetectors.
I think your real question should be the potential of Silicon
heterostructure photodectors vs. Gallium heterostructure
photodetectors. The short answer to this is Galium is much better
and more flexible but there is a massive push to make Silicon
feasible. Silicon will probably win out in the long run. Where
there is a will and lots of money there is a way.
Matt Peterson