... of the published NMOS bits!
Sure, i know what they're saying to me but tomtry to actually understand the way the actual photosites are arranged?
It's as clear as mud!
Now to my simple eyes: that is an illustration of the top of a photosite, right? It's a section though a photosite.. a pixel!
First off, half the photosite has 'AL Seal' and 'aperture' closing off about ½ of the avialable surface.
So only about 50% of the suface is open to the light thru the aperture, right!
Then there's a bit of 'P-Sub' and 'Curcuit' closing off a good 2/3rds of that already restricted opening.
What's left is a 'L' shaped photosite, the opening of which is using about 1/7th of the area available to the photosite!
Now here's what the press release says about the photosites design:
"Redesigned Sensor Elements with Greater Photosensitive Surface Area
The Live MOS Sensor takes advantage of the simplified circuit requirements and thinner layer structure of NMOS type sensors to offer a larger photosensitive surface area. In addition, circuit technology refinements were made to boost light utilisation efficiency and improve image quality.
A new transfer mechanism for photodiode signal readout enabled us to reduce the number of circuit paths to two, the same as in a CCD sensor, and thereby minimise the surface area that is unresponsive to light. By effectively enlarging the photosensitive surface area and enabling it to capture light that was previously lost, we were able to achieve both high sensitivity and superior image quality. We also developed a new low-noise photodiode signal amplification circuit to further improve sensitivity."
The drawing says one thing and the press release another!
Surely after all the time that's elapsed since NMOS was installed in the 330, we should know more about it?
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