At 24 MP, that is 22% increase in lineal resolution over 16 MP. Some lenses may begin to be the limiting factor. Furthermore, image stabilization may be more essential also. At 16 MP, I can already make prints larger than I normally need, so increasing resolution is of little value to me. I hope improvements will be in dynamic range & high ISO performance along with low noise A/D conversion. My dream would be a camera with at least 18 ev or larger dynamic range at base ISO and at least 14 ev at ISO 6400.
Twong, I agree with you that most of us don't really need more resolution, although it will likely come whether we really think we need it or not. However, do you know what you are asking for in your Dynamic Range (DR) requirement?
First, for a state-of-the-art camera as you are speculating here, the limit to DR is likely mainly to be the black read noise of the sensor and Analogue to Digital Converter (ADC) combination. Since ideally the black read noise changes linearly with ISO sensitivity gain, in order to deliver 14 EV of DR at ISO 6400, one would need
20 EV of DR at ISO 100 if that were the "base ISO" to meet this requirement!
Next, current silicon photo sensors with their maximum possible efficiency don't have more than about 64,000 electrons as their Full Electron Well Capacity (FEWC) at an ISO of about 100 for a reasonable photosite density. In order to have a sensor black read noise low enough to support a 20 EV DR at this ISO would require a black read noise of less than one sixteenth of an electron; even an 18 EV DR would require a black read noise of less than a quarter of an electron. As electrons aren't really divisible, this essentially means zero sensor black read noise, which may be possible but very unlikely over all environmental conditions including sensor heat.
Then, even if the sensor had zero black read noise, such a wide DR requires at least an ideal 16-bit ADC for 18 EV of DR and 18 bits for 20 EV DR, and by "ideal" I mean that it must act as if the Effective Number Of Bits (ENOB) rating of the ADC is good to the very Least Significant Bit (LSB), which usualy means it needs at least a couple of extra bits.
Yet another limit to ever being able to deliver such a wide DR using silicon photo sensors is the random statistical arrival of photons or the so-called "shot noise" and the definition of the lower range of DR as where the standard deviation of the noise drops so that the Signal to Noise Ratio (SNR) is 1 : 1, which is also about the practical limit where small details start to get "buried in the noise". For very low signal levels and zero black read noise there are two solutions to the equation of this limit and one of the solutions is that the SNR is 1 : 1 when the signal is one electron = photon (at 100% efficiency), which for a 65,536 electron photo detector happens at 16 EV below the bright clipping limit (of 65536 electrons).
I think that practically the real limit to DR, at least for current silicon photo dectectors, is about 16 stops at lowest ISO of say 100, and it will likely take at least another five to ten years to get there from the current about 14 stops. Then the limit will scale with ISO sensitivity for 12 EV at ISO 1600 and 10 EV for ISO 6400 (without noise reduction).
It might be possible to increase this by an EV or two if CMOS sensor technology were adapted to larger sensors such as Medium Format (MF) or Large Format (LF) digital cameras, but the cost would be huge as the market is quite limited.
I think that the drive for wider DR will likely ease off once digital cameras exceed the DR of colour negative film at about 12 EV at lowest ISO, which they likely do now with the best current digital cameras delivering about 14 EV at lowest ISO.
Regards, GordonBGood